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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLF202 HF/VHF power MOS transistor
Product specification 1999 Oct 20
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization * Good thermal stability * Withstands full load mismatch. APPLICATIONS * Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap.
handbook, halfpage
BLF202
PINNING - SOT409A PIN 1, 8 2, 3 4, 5 6, 7 source gate source drain DESCRIPTION
8
5
1 Top view
4
MBK150
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PL (W) 2 Gp (dB) >10 D (%) >50
1999 Oct 20
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature Tmb 85 C CONDITIONS MIN. - - - - -65 -
BLF202
MAX. 40 20 1 5.7 150 200
UNIT V V A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Tmb 85 C, Ptot = 5.7 W VALUE 20.5 UNIT K/W
handbook, halfpage
10
MCD789
ID (A) 1
(1) (2)
10-1
10-2
1
10
VDS (V)
102
(1) Current is this area may be limited by RDS(on). (2) Tmb = 85 C.
Fig.2 DC SOAR.
1999 Oct 20
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGS(th) IDSS IGSS IDSX RDSon gfs Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate-source leakage current on-state drain current drain-source on-state resistance forward transconductance input capacitance output capacitance feedback capacitance CONDITIONS ID = 3 mA; VGS = 0 ID = 3 mA; VDS = 10 V VGS = 0; VDS = 12.5 V VGS = 20 V; VDS = 0 VGS = 15 V; VDS = 10 V ID = 0.3 A; VGS = 15 V ID = 0.3 A; VDS = 10 V MIN. 40 2 - - - - 80 TYP. - - - - 1.3 3.5 135 5.3 7.8 1.8
BLF202
MAX. UNIT - 4.5 10 1 - 4 - - - - V V A A A mS pF pF pF
VGS = 0; VDS = 12.5 V; f = 1 MHz - VGS = 0; VDS = 12.5 V; f = 1 MHz - VGS = 0; VDS = 12.5 V; f = 1 MHz -
handbook, halfpage
15
MGP111
handbook, halfpage
1600
MGP112
T.C. (mV/K) 10
ID (mA) 1200
5
800
0
400
-5
1
10
102
ID (mA)
103
0 0 4 8 12 16 20 VGS (V)
VDS = 10 V. VDS = 10 V; Tj = 25 C.
Fig.3
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.4
Drain current as a function of gate-source voltage; typical values.
1999 Oct 20
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
handbook, halfpage
5
MGP113
MGP114
RDSon () 4
handbook, halfpage
30
C (pF)
20 3 Cos 2 10 Cis 1
0 0 40 80 120 Tj (C) 160
0 0 4 8 12 VDS (V) 16
VGS = 15 V; ID = 0.3 A. VGS = 0; f = 1 MHz.
Fig.5
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.6
Input and output capacitance as functions of drain-source voltage; typical values.
MGP115
handbook, halfpage
5
Crs (pF)
4
3
2
1
0 0 4 8 12 VDS (V) 16
VGS = 0; f = 1 MHz.
Fig.7
Feedback capacitance as a function of drain-source voltage; typical values.
1999 Oct 20
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 C; RGS = 237 ; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.5 IDQ (mA) 20 PL (W) 2 Gp (dB) >10; typ. 13
BLF202
D (%) >50; typ. 55
Ruggedness in class-B operation The BLF202 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 175 MHz at rated load power.
handbook, halfpage
20
MGP116
Gp (dB)
100 D (%) 80
MGP117
handbook, halfpage
4
16 Gp 12
PL (W) 3
D
60
2
8 40
4
1
20
0 1 1.5 2 2.5 3 PL (W)
0 3.5
0 0 0.2 0.4 0.6 PIN (W) 0.8
Class-B operation; VDS = 12.5 V; IDQ = 20mA; f = 175 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA; f = 175 MHz.
Fig.8
Power gain and efficiency as a functions of load power; typical values.
Fig.9
Load power as a function of input power; typical values.
1999 Oct 20
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
handbook, full pagewidth
C10 C8 L4
D.U.T. 50 input C1 L1 L2
L3
C11
50 output
L5 C2 R1 C3 L6 R2 C4 R3 R5 C7 +VD C5 R6 C6
C9
R4
MGP118
f = 175 MHz.
Fig.10 Test circuit for class-B operation.
1999 Oct 20
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1, C11 C2, C9 C3, C5 C4, C6 DESCRIPTION film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor VALUE 2 to 9 pF 2 to 9 pF 1 nF; 500 V 2 x 100 nF in parallel, 50 V 2.2 F; 35 V 5.1 pF; 500 V 9.1 pF; 500 V 137 nH length 5.1 mm; int. dia. 4 mm; leads 2 x 5 mm 8 mm x 2 mm length 5 mm; int. dia. 6 mm; leads 2 x 5 mm length 11 mm; int. dia. 7 mm; leads 2 x 5 mm DIMENSIONS
BLF202
CATALOGUE NO. 2222 809 09005 2222 809 09002
2222 852 47104
C7 C8 C10 L1
Sprague electrolytic tantalum capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 8 turns enamelled 0.8 mm copper wire stripline; note 2
L2, L3 L4
81
3 turns enamelled 1 mm copper wire 57 nH
L5
9 turns enamelled 1 mm copper wire 355 nH
L6 R1 R2 R3 R4 R5 R6 Notes
grade 3B Ferroxcube RF choke 0.4 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor 237 1 k 1 M 5 k 7.5 k 10
4312 020 36642 2322 151 72371 2322 151 71002 2322 151 71005 2322 151 77502 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm.
1999 Oct 20
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF202
handbook, halfpage
250
MGP119
MGP120
handbook, halfpage
50 ZL
Zi () 125 ri
() 40 RL 30
20 0 10 xi -125 0 50 100 150 200 0 0 50 100 150 f (MHz) 200 XL
f (MHz)
Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 ; PL = 2 W.
Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 ; PL = 2 W.
Fig.11 Input impedance as a function of frequency (series of components); typical values.
Fig.12 Load impedance as a function of frequency (series components); typical values.
MGP121
handbook, halfpage
20
Gp (dB) 15
handbook, halfpage
10
5 Zi ZL
MBA379
0 0 50 100 150 f (MHz) 200
Class B-operation; VDS = 12.5 V; IDQ = 20 mA; RGS = 237 ; PL = 2 W.
Fig.13 Definition of MOS impedance.
Fig.14 Power gain as a function of frequency; typical values.
1999 Oct 20
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
MOUNTING RECOMMENDATIONS
BLF202
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of 0.8 mm maximum thickness on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board.
handbook, full pagewidth
1.87 (2x)
0.60 (4x)
0.80 (2x)
0.50 (12x) 7.38 3.60 1.00 (8x)
1.00 (9x) 4.60
MGK390
Dimensions in mm.
Fig.15 Footprint SOT409A.
1999 Oct 20
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
PACKAGE OUTLINE Ceramic surface mounted package; 8 leads
BLF202
SOT409A
D
A
D2
B
H1 8 5
w2 B L
c
H
E2
E
A 1 e b 4 w1
Q1
0
2.5 scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.36 2.06 0.093 0.081 b 0.58 0.43 0.023 0.017 c 0.23 0.18 0.009 0.007 D 5.94 5.03 0.234 0.198 D2 5.16 5.00 0.203 0.197 E 4.93 4.01 0.194 0.158 E2 4.14 3.99 0.163 0.157 e 1.27 0.050 H 7.47 7.26 0.294 0.286 H1 4.39 4.24 0.173 0.167 L 1.02 0.51 0.040 0.020 Q1 0.10 0.00 0.004 0.000 w1 0.25 0.010 w2 0.25 0.010
7 0 7 0
OUTLINE VERSION SOT409A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-01-27
1999 Oct 20
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BLF202
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Oct 20
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
NOTES
BLF202
1999 Oct 20
13
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
NOTES
BLF202
1999 Oct 20
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
NOTES
BLF202
1999 Oct 20
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/01/pp16
Date of release: 1999
Oct 20
Document order number:
9397 750 06378

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